EMPIRICAL-MODEL FOR GALLIUM-ARSENIDE MESFETS

A nonlinear model for GaAs MESFETs, suitable for inclusion in general circuit simulation programs, such as SPICE is described. To run efficiently, programs such as SPICE require simple models that can be described by as few parameters as possible, yet still meeting the accuracy criteria, and it is for this reason that an entirely empirical approach has been taken. The dc model for drain current is defined by seven parameters, with a further six defining the MES diode equations and the basic capacitance model. The model has been implemented in SPICE, and several characteristics are produced to indicate model accuracy.