INTERFACE DEMARCATION DURING LPE GROWTH OF GAAS

被引：7

作者：

BLOM, GM

DANIELE, JJ

KYROS, T

WITT, AF

机构：

[1] PHILIPS LABS, BRIARCLIFF MANOR, NY 10510 USA

[2] MIT, DEPT MAT SCI, CAMBRIDGE, MA 02138 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 11期

关键词：

D O I：

10.1149/1.2134059

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1541 / 1544

页数：4

共 19 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2]

BRICE JC, 1973, GROWTH CRYSTALS LIQU, P120

[3] GAAS-ALXGA1-XAS HETEROSTRUCTURE LASER WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT [J].

CASEY, HC ;

PANISH, MB ;

SCHLOSSE.WO ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :322-333

[4] COMPUTER SIMULATIONS OF LIQUID PHASE EPITAXY OF GAAS IN GA SOLUTION [J].

CROSSLEY, I ;

SMALL, MB .

JOURNAL OF CRYSTAL GROWTH, 1971, 11 (02) :157-&

[5]

DANIELE JJ, 1974, 5TH P INT S GAAS REL, P155

[6] CROSS-SECTIONAL RESISTIVITY VARIATIONS IN GERMANIUM SINGLE CRYSTALS [J].

DIKHOFF, JAM .

SOLID-STATE ELECTRONICS, 1960, 1 (03) :202-&

[7] SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS [J].

HALL, RN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :385-388

[8]

HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[9]

HULME KF, 1954, PHILOS MAG, V4, P1286

[10] CURRENT-CONTROLLED GROWTH AND DOPANT MODULATION IN LIQUID-PHASE EPITAXY [J].

KUMAGAWA, M ;

WITT, AF ;

LICHTENSTEIGER, M ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) :583-584

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