POLYCRYSTALLINE ZN3P2/INDIUM-TIN OXIDE SOLAR-CELLS

被引：24

作者：

SUDA, T ^{[1
]}

SUZUKI, M ^{[1
]}

KURITA, S ^{[1
]}

机构：

[1] KEIO UNIV,DEPT ELECT ENGN,YOKOHAMA,KANAGAWA 223,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 10期

关键词：

Semiconducting indium compounds - Semiconducting zinc compounds;

D O I：

10.1143/JJAP.22.L656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zinc phosphide (Zn//3P//2)/indium-tin oxide (ITO) heterojunction solar cells are fabricated by rf sputter depositing ITO on large grain polycrystalline Zn//3P//2 wafers. An AES analysis indicates that sputter etching of the Zn//3P//2 wafer surface before depositing ITO is of great importance in achieving a better performance as a solar cell. The passivation of Zn//3P//2 by reaction with atomic hydrogen is found to improve the cell performance significantly. Consequently, a power conversion efficiency of 2. 1%(6mm**2 in active area) has been obtained without antireflection coating. 11 refs.

引用

页码：L656 / L658

页数：3

共 11 条

[1] POLYCRYSTALLINE ZN3P2 SCHOTTKY-BARRIER SOLAR-CELLS [J].