LITHOGRAPHY ISSUES IN FABRICATING HIGH-PERFORMANCE SUB-100-NM CHANNEL METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：1

作者：

KERN, DP

RISHTON, SA

CHANG, THP

SAIHALASZ, GA

WORDEMAN, MR

GANIN, E

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1836 / 1840

页数：5

共 14 条

[1]

CHAO PC, 1987, IEDM, P410

[2] OBSERVATION OF ELECTRON VELOCITY OVERSHOOT IN SUB-100-NM-CHANNEL MOSFETS IN SILICON [J].

CHOU, SY ;

ANTONIADIS, DA ;

SMITH, HI .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :665-667

[3]

COANE PJ, 1982, 10TH P S EL ION BEAM, V2

[4]

HORIGUCHI S, 1988, IEDM, P761

[5] QUANTITATIVE-ANALYSIS OF RESOLUTION AND STABILITY IN NANOMETER ELECTRON-BEAM LITHOGRAPHY [J].

KRATSCHMER, E ;

RISHTON, SA ;

KERN, DP ;

CHANG, THP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2074-2079

[6] MONTE-CARLO SIMULATION OF SUBMICROMETER SI N-MOSFETS AT 77-K AND 300-K [J].

LAUX, SE ;

FISCHETTI, MV .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :467-469

[7] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J].

LIECHTI, CA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :279-330

[8] LITHOGRAPHY FOR ULTRASHORT CHANNEL SILICON FIELD-EFFECT TRANSISTOR-CIRCUITS [J].

RISHTON, SA ;

SCHMID, H ;

KERN, DP ;

LUHN, HE ;

CHANG, THP ;

SAIHALASZ, GA ;

WORDEMAN, MR ;

GANIN, E ;

POLCARI, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :140-145

[9] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J].

RUCH, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :652-&

[10] HIGH TRANSCONDUCTANCE AND VELOCITY OVERSHOOT IN NMOS DEVICES AT THE 0.1-MU-M GATE-LENGTH LEVEL [J].

SAIHALASZ, GA ;

WORDEMAN, MR ;

KERN, DP ;

RISHTON, S ;

GANIN, E .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :464-466

← 1 2 →