ELECTRONIC-STRUCTURE OF SMALL GAAS CLUSTERS

被引:123
作者
LOU, L
WANG, L
CHIBANTE, LPF
LAAKSONEN, RT
NORDLANDER, P
SMALLEY, RE
机构
[1] RICE UNIV, DEPT CHEM, HOUSTON, TX 77251 USA
[2] RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
关键词
D O I
10.1063/1.460135
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electronic structure of small Ga(x)As(y) clusters (x + y less-than-or-equal-to 10) are calculated using the local density method. The calculation shows that even-numbered clusters tend to be singlets, as opposed to odd-numbered clusters which are open shell systems. This is in agreement with the experimental observations of even/odd alternations of the electron affinity and ionization potential. In the larger clusters, the atoms prefer an alternating bond arrangement; charge transfers are observed from Ga sites to As sites. This observation is also in agreement with recent chemisorption studies of ammonia on GaAs clusters. The close agreement between theoretical calculations and experimental results, together with the rich variation of electronic properties of GaAs clusters with composition makes GaAs clusters an ideal prototype system for the study of how electronic structure influences chemical reactivity.
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页码:8015 / 8020
页数:6
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