PERPENDICULAR HOT-ELECTRON SPIN-VALVE EFFECT IN A NEW MAGNETIC-FIELD SENSOR - THE SPIN-VALVE TRANSISTOR

被引：342

作者：

MONSMA, DJ ^{[1
]}

LODDER, JC ^{[1
]}

POPMA, TJA ^{[1
]}

DIENY, B ^{[1
]}

机构：

[1] CEA,DEPT RECH FONDAMENTALE MAT CONDENSEE,F-38054 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.74.5260

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (Co/Cu)4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor structure allows the investigation of energy resolved perpendicular transport properties, and in particular spin-dependent scattering of hot electrons in transition-metal as well as rare-earth-based multilayers. © 1995 The American Physical Society.

引用

页码：5260 / 5263

页数：4

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