FIELD-EFFECT INTERFACE CONDUCTANCE IN GE-GAAS N-N HETEROJUNCTIONS ( GE-GAAS HETEROJUNCTION INTERFACE CONDUCTANCE EFFECT OF ELECTRIC FIELD ON AC + DC TECHNIQUES E )

被引：15

作者：

ESAKI, L

HOWARD, WE

HEER, J

机构：

来源：

关键词：

D O I：

10.1063/1.1723579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3 / &

相关论文

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[3]

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[5]

1960, PHYS CHEM SOLIDS, V14