CURRENT INSTABILITIES IN GALLIUM ARSENIDE

被引:8
作者
SHUSKUS, AJ
SHAW, MP
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 11期
关键词
D O I
10.1109/PROC.1965.4430
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:1804 / &
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[1]   INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].
GUNN, JB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&
[2]   S-BAND GAAS GUNN EFFECT OSCILLATORS [J].
QUIST, TM ;
FOYT, AG .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (03) :303-&