DEPENDENCE OF THE FUNDAMENTAL ABSORPTION-EDGE OF CDINGAS4 ON HYDROSTATIC-PRESSURE

被引：8

作者：

TOYODA, T

NAKANISHI, H

ENDO, S

IRIE, T

机构：

[1] FUJI ELECT CORP RES & DEV LTD,YOKOSUKA 24001,JAPAN

[2] SCI UNIV TOKYO,FAC SCI & TECHNOL,DEPT ELECT ENGN,NODA,CHIBA 278,JAPAN

[3] SCI UNIV TOKYO,FAC ENGN,DEPT ELECT ENGN,SHINJUKU KU,TOKYO 162,JAPAN

来源：

PHYSICS LETTERS A | 1985年 / 107卷 / 06期

关键词：

D O I：

10.1016/0375-9601(85)90217-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：283 / 286

页数：4

共 13 条

[1]

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[2]

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[7] PHOTOLUMINESCENCE OF THE LAYERED COMPOUND CDINGAS4 [J].

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ENDO, S ;

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[8] ELECTRICAL EFFECTS ASSOCIATED WITH THE ORDERING PROCESS IN CDINGAS4 CRYSTALS .1. ELECTRON-MICROSCOPY AND ELECTRON-DIFFRACTION STUDY [J].

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[9] FUNDAMENTAL ABSORPTION-EDGE IN CDIN2S4 [J].

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[10]

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