FABRICATION OF MICROSTRUCTURES FOR QUANTUM DEVICES USING FOCUSED ION-BEAM GAS-ASSISTED ETCHING

被引：5

作者：

OCHIAI, Y

YOUNG, RJ

CLEAVER, JRA

AHMED, H

BABA, T

机构：

[1] Microelectronics Research Centre, Cavendish Laboratory, Cambridge, CB3 OHE, Madingley Road

[2] Fundamental Research Laboratory, NEC Corporation, Tsukuba, 305

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90120-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Focused ion beam gas-assisted etching (FIB-GAE) has been used to fabricate microstructures for the investigation of quantum interference effects. A 30 keV gallium ion beam is used for etching AlGaAs/GaAs wafers in a chlorine gas environment. A PMMA protective layer is used to assist the fabrication process. Electrical measurements at low temperatures have been made on narrow wires. and weak localization effects have been observed.

引用

页码：399 / 402

页数：4

共 8 条

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