DIRECT OBSERVATION OF AN INCREASE IN BUCKLED DIMERS ON SI(001) AT LOW-TEMPERATURE

被引：594

作者：

WOLKOW, RA

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.68.2636

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The first low-temperature scanning-tunneling-microscope (STM) images of Si(001) are presented. It is observed that on cooling to 120 K the number of buckled dimers increases, confirming that dimers have an asymmetric character. Buckled-dimer domains of c(4 x 2) order are bounded by p(2 x 2) regions. Defects pin nearby dimers into a buckled configuration and act to smear out the transition to order. At room temperature dimers rapidly switch orientation leading to an averaged symmetric appearance in STM images.

引用

页码：2636 / 2639

页数：4

共 32 条

[1] LOW-ENERGY ION-SCATTERING FROM THE SI(001) SURFACE [J].

AONO, M ;

HOU, Y ;

OSHIMA, C ;

ISHIZAWA, Y .

PHYSICAL REVIEW LETTERS, 1982, 49 (08) :567-570

[2] SI(100) SURFACE RECONSTRUCTION - SPECTROSCOPIC SELECTION OF A STRUCTURAL MODEL [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1975, 35 (11) :729-732

[3] SI(100) SURFACE - FURTHER-STUDIES OF PAIRING MODEL [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1977, 15 (04) :2408-2412

[4] SI (100) SURFACE .3. SURFACE RECONSTRUCTION [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1976, 14 (02) :588-601

[5] SI (100) SURFACE - THEORETICAL-STUDY OF UNRECONSTRUCTED SURFACE [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1975, 11 (10) :3822-3831

[6] SI (100) SURFACE .2. THEORETICAL-STUDY OF RELAXED SURFACE [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1975, 12 (12) :5749-5757

[7] PROPOSAL FOR SYMMETRIC DIMERS AT THE SI(100)-2X1 SURFACE [J].

ARTACHO, E ;

YNDURAIN, F .

PHYSICAL REVIEW LETTERS, 1989, 62 (21) :2491-2494

[8] DIFFRACTION OF HE ATOMS AT A SI(100) SURFACE [J].

CARDILLO, MJ ;

BECKER, GE .

PHYSICAL REVIEW LETTERS, 1978, 40 (17) :1148-1151

[9] DIFFRACTION OF HE AT THE RECONSTRUCTED SI(100) SURFACE [J].

CARDILLO, MJ ;

BECKER, GE .

PHYSICAL REVIEW B, 1980, 21 (04) :1497-1510

[10] HIGH-RESOLUTION INFRARED-SPECTROSCOPY OF ADSORBATES ON SEMICONDUCTOR SURFACES - HYDROGEN ON SI(100) AND GE(100) [J].

CHABAL, YJ .

SURFACE SCIENCE, 1986, 168 (1-3) :594-608

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