CONJUGATED POLYMER LIGHT-EMITTING-DIODES ON SILICON SUBSTRATES

被引：77

作者：

BAIGENT, DR ^{[1
]}

MARKS, RN ^{[1
]}

GREENHAM, NC ^{[1
]}

FRIEND, RH ^{[1
]}

MORATTI, SC ^{[1
]}

HOLMES, AB ^{[1
]}

机构：

[1] UNIV CAMBRIDGE, CHEM LAB, CAMBRIDGE CB2 1EW, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 21期

关键词：

D O I：

10.1063/1.112587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication of polymer electroluminescent devices on doped silicon substrates. An electron-injecting aluminum electrode is thermally evaporated onto the silicon substrate, and a layer of a high electron affinity conjugated polymer, poly(cyanoterephthalylidene), CN-PPV, is then spin coated onto this. A hole-transporting layer of poly(p-phenylene vinylene), PPV, is formed on top of the CN-PPV layer by thermal conversion of a spin-coated layer of the sulphonium precursor polymer. Finally, a transparent hole-injecting top electrode of indium-tin oxide is formed by rf sputtering. These devices show efficient red electroluminescence, with emission from the CN-PPV layer. © 1994 American Institute of Physics.

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页码：2636 / 2638

页数：3

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