NOISE AND SMALL-SIGNAL PERFORMANCE OF 3 DIFFERENT MONOLITHIC INP-BASED 10GBIT/S PHOTORECEIVER OEICS

被引：2

作者：

KAISER, D

BESCA, F

GROSSKOPF, H

GYURO, I

REEMTSMA, JH

KUEBART, W

机构：

[1] Alcatel SEL Research Centre, Dep. Opto-Electronic Components ZFZ/WO, Lorenzstr. 10

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 24期

关键词：

INTEGRATED OPTOELECTRONICS; OPTICAL RECEIVERS; SEMICONDUCTOR DEVICE NOISE;

D O I：

10.1049/el:19941397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three circuit concepts (high impedance, common gate, and transimpedance) for a 10Gbit/s monolithic receiver OEIC consisting of an InGaAs/InP pin photodiode and InAlAs/InGaAs/InP HEMTs are compared in terms of noise and small-signal performance using on-wafer measurements. A total equivalent Input noise current of 13.5pA/root Hz within the bandwidth of the transimpedance circuit is the lowest value ever reported for a monolithic InP-based 10Gbit/s receiver OEIC.

引用

页码：2070 / 2072

页数：3