ELECTROREFLECTANCE OF GAP TO 27 EV

被引：22

作者：

ASPNES, DE

OLSON, CG

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] IOWA STATE UNIV,DEPT PHYS,AMES,IA 50010

[3] ATOM ENERGY COMM,AMES LAB,AMES,IA 50010

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 33卷 / 27期

关键词：

D O I：

10.1103/PhysRevLett.33.1605

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1605 / 1607

页数：3

共 28 条

[1] ANALYSIS OF MODULATION SPECTRA OF STRATIFIED MEDIA
ASPNES, DE
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1973, 63 (11) : 1380 - 1390
[2] ASYMPTOTIC CONVOLUTION INTEGRAL FOR ELECTRIC FIELD EFFECTS ON INTERBAND DIELECTRIC FUNCTION
ASPNES, DE
ROWE, JE
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (14) : 1145 - &
[3] LINEARIZED THIRD-DERIVATIVE SPECTROSCOPY WITH DEPLETION-BARRIER MODULATION
ASPNES, DE
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (14) : 913 - &
[4] RESONANT NONLINEAR OPTICAL SUSCEPTIBILITY - ELECTROREFLECTANCE IN LOW-FIELD LIMIT
ASPNES, DE
ROWE, JE
[J]. PHYSICAL REVIEW B, 1972, 5 (10): : 4022 - &
[5] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS
ASPNNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW B, 1973, 7 (10): : 4605 - 4652
[6] CORE TRANSITIONS AND DENSITY OF CONDUCTION STATES IN III-V SEMICONDUCTORS
CARDONA, M
GUDAT, W
KOCH, EE
SKIBOWSKI, M
SONNTAG, B
YU, PY
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (10) : 659 - +
[7] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE
CARDONA, M
SHAKLEE, KL
POLLAK, FH
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +
[8] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
COHEN, ML
BERGSTRESSER, TK
[J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +
[9] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV
DEAN, PJ
KAMINSKY, G
ZETTERSTROM, RB
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3551 - +
[10] EASTMAN DE, 1973, SOLID STATE COMMUN, V13, P1815, DOI 10.1016/0038-1098(73)90736-9

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