HIGH-RESOLUTION ELECTRON-MICROSCOPIC INVESTIGATIONS OF DISLOCATIONS IN DEFORMED GAAS SINGLE-CRYSTALS DOPED WITH TE

被引：13

作者：

MAKSIMOV, SK ^{[1
]}

ZIEGLER, M ^{[1
]}

KHODOS, II ^{[1
]}

SNIGHIRYOVA, II ^{[1
]}

SHIKHSAIDOV, MS ^{[1
]}

机构：

[1] ACAD SCI GDR,INST SOLID STATE PHYS & ELECTRON MICROSCOPY,DDR-4010 HALLE,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 84卷 / 01期

关键词：

D O I：

10.1002/pssa.2210840110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：79 / 86

页数：8

共 21 条

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[2]

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[8] PRELIMINARY STUDIES OF CRYSTAL DEFECTS IN CADMIUM-SULFIDE BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J].

ECHIGOYA, J ;

PIROUZ, P ;

EDINGTON, JW .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 45 (03) :455-466

[9] DISSOCIATION OF DISLOCATIONS IN GAAS [J].

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[10]

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