SURFACE-STRUCTURE, LATTICE-DYNAMICS, AND RAMAN-SPECTROSCOPY OF SULFUR PASSIVATED INP(001)

被引：48

作者：

JIN, JM

DHARMAWARDANA, MWC

LOCKWOOD, DJ

AERS, GC

LU, ZH

LEWIS, LJ

机构：

[1] UNIV MONTREAL,DEPT PHYS,MONTREAL,PQ H3C 3J7,CANADA

[2] UNIV MONTREAL,RECH PHYS & TECHNOL COUCHES MINCES GRP,MONTREAL,PQ H3C 3J7,CANADA

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.75.878

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The sulphur-passivated InP(001) surface is studied theoretically using density-functional methods and experimentally using Raman spectroscopy. The lowest energy structure is a very striking (2 X 2) reconstruction with the S atoms displaced from the bridge sites to form short and long dimers, belonging to Two distinct sublayers. The underlying In layer remains integral, but the P layer below it also splits into two sublayers. This structure is used to calculate the [001] interplanar force constants and the backscattering Raman spectrum. Two peaks arising from surface-layer vibrations, predicted to be at 190 and 257 cm(-1), are observed experimentally.

引用

页码：878 / 881

页数：4

共 32 条

[1] CALCULATED ATOMIC STRUCTURES AND ELECTRONIC-PROPERTIES OF GAP, INP, GAAS, AND INAS (110) SURFACES [J].

ALVES, JLA ;

HEBENSTREIT, J ;

SCHEFFLER, M .

PHYSICAL REVIEW B, 1991, 44 (12) :6188-6198

[2]

BRICE JC, 1991, PROPERTIES INDIUM PH, P5

[3] EFFECTS OF NA2S AND (NH4)2S EDGE PASSIVATION TREATMENTS ON THE DARK CURRENT-VOLTAGE CHARACTERISTICS OF GAASPN DIODES [J].

CARPENTER, MS ;

MELLOCH, MR ;

LUNDSTROM, MS ;

TOBIN, SP .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2157-2159

[4] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].

CEPERLEY, DM ;

ALDER, BJ .

PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569

[5] HIGH-EFFICIENCY INDIUM TIN OXIDE INDIUM-PHOSPHIDE SOLAR-CELLS [J].

COUTTS, TJ ;

NASEEM, S .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :164-166

[6]

DABROWSKI J, 1992, APPL SURF SCI, V56-8, P15, DOI 10.1016/0169-4332(92)90208-F

[7] INTERPRETATION OF RAMAN-SPECTRA OF GE/SI ULTRATHIN SUPERLATTICES [J].

DHARMAWARDANA, MWC ;

AERS, GC ;

LOCKWOOD, DJ ;

BARIBEAU, JM .

PHYSICAL REVIEW B, 1990, 41 (08) :5319-5331

[8] METAL-DEPENDENT SCHOTTKY-BARRIER HEIGHT WITH THE (NH4)2SX-TREATED GAAS [J].

FAN, JF ;

OIGAWA, H ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2125-L2127

[9] THE EFFECT OF (NH4)2S TREATMENT ON THE INTERFACE CHARACTERISTICS OF GAAS MIS STRUCTURES [J].

FAN, JF ;

OIGAWA, H ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (07) :L1331-L1333

[10] POINT-DEFECT-INDUCED CRYSTAL-GROWTH - AN AB-INITIO STUDY [J].

JIN, JM ;

LEWIS, LJ ;

MILMAN, V ;

STICH, I ;

PAYNE, MC .

PHYSICAL REVIEW B, 1993, 48 (15) :11465-11468

← 1 2 3 4 →