EXACT AND MOMENT EQUATION MODELING OF ELECTRON-TRANSPORT IN SUBMICRON STRUCTURES

被引：10

作者：

GEURTS, BJ ^{[1
]}

NEKOVEE, M ^{[1
]}

BOOTS, HMJ ^{[1
]}

SCHUURMANS, MFH ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期

关键词：

D O I：

10.1063/1.106237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare I-V characteristics of a semiconducting submicron n+nn+ diode as predicted by extended moment equation approximations to those obtained from the solution of the corresponding Boltzmann equation. All lower order models fail in the predominantly ballistic regime. Moreover, the conductance is inadequately predicted by these models, even in nonballistic cases due to the high build-in electric fields.

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收藏

页码：1743 / 1745

页数：3

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