MAGNETIC BAND-STRUCTURE AT THE FE/GAAS(100) INTERFACE

被引：4

作者：

HIMPSEL, FJ

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 17期

关键词：

D O I：

10.1063/1.105048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using inverse photoemission, the uppermost minority spin d band of Fe on GaAs(110) is found to move down by 0.9 eV for the first layer. This indicates a nearly complete collapse of the ferromagnetic exchange splitting at the interface. The decrease happens over a range of about 100 angstrom, which parallels the reported decrease of the magnetization for epitaxial Fe films on GaAs

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页码：1920 / 1922

页数：3

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