QUICK RESPONSE FIELD SENSOR USING 200MHZ AMORPHOUS MI ELEMENT FET MULTIVIBRATOR RESONANCE OSCILLATOR

被引:16
作者
YOSHIDA, Y
UCHIYAMA, T
MOHRI, K
OHGA, S
机构
[1] NAGOYA UNIV,DEPT ELECT ENGN,CHIKUSA KU,NAGOYA,AICHI 464,JAPAN
[2] KAWASAKI STEEL TECHNORES CORP,CTR R&D,KAWASAKI,CHIBA 211,JAPAN
关键词
D O I
10.1109/20.281128
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A circumferential flux change in an amorphous wire (a-wire,for short) due to a high frequency wire current induces an inductive AC voltage e, between both ends of the wire. And an amplitude of e(L) decreases with increasing an external field Hex. We call the effect as ''magneto-inductive (MI) effect.'' This effect sensitively appears in a zero-magnetostrictive wire which is cold drawn and then tension annealed. A multivibrator resonance oscillator having oscillation frequencies near 200 MHz (180-220 MHz) is constructed using two a-wires and two N channel junction field effect transistors(FET) with some resistors and capacitors. An inductance L of the a-wire and a capacitor C appeared between the source and the drain decide a oscillation frequency of 1/2pi square-root LC at a resonance. Small magnetic field less than several oersteds were linearly detected by adding a bias field to each a-wire. High frequency fields up to the cut-off frequency (around 20 MHz) would be detected using the MI effect multivibrator, which is effective for non-contact sensing for a plasma current in a plasma furnace and discharge current and other high speed electromagnetic phenomena.
引用
收藏
页码:3177 / 3179
页数:3
相关论文
共 2 条
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[2]  
1993, Patent No. 24059