NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING

被引：165

作者：

ESAKI, L

STILES, PJ

机构：

来源：

PHYSICAL REVIEW LETTERS | 1966年 / 16卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.16.1108

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1108 / &

共 11 条

[1]

BYLANDER BG, 1965, PHYS REV, V138, pA864

[2]

Efimova B.A., 1965, FIZ TVERD TELA, V7, P2524

[3]

EFIMOVA BA, 1966, FIZ TVERD TELA+, V7, P2032

[4] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].

ESAKI, L .

PHYSICAL REVIEW, 1958, 109 (02) :603-604

[5] BISB ALLOY TUNNEL JUNCTIONS [J].

ESAKI, L ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (13) :574-&

[6] STUDY OF ELECTRONIC BAND STRUCTURES BY TUNNELING SPECTROSCOPY - BISMUTH [J].

ESAKI, L ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1965, 14 (22) :902-&

[7] TUNNELING FROM AN INDEPENDENT-PARTICLE POINT OF VIEW [J].

HARRISON, WA .

PHYSICAL REVIEW, 1961, 123 (01) :85-&

[8] EVIDENCE THAT SNTE IS SEMICONDUCTOR ( RM TEMP ACCEPTOR CONC 4 TIMES 1019 CM-3 ENERGY BAND MODEL THERMOELECTRIC PREPARATION AT HIGH PRESSURE E/T ) [J].

KAFALAS, JA ;

BREBRICK, RF ;

STRAUSS, AJ .

APPLIED PHYSICS LETTERS, 1964, 4 (05) :93-&

[9] POTENTIAL BARRIER PARAMETERS IN THIN-FILM AL-AL2O3-METAL DIODES [J].

NELSON, OL ;

ANDERSON, DE .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :77-&

[10]

POLLACK SR, 1965, T METALL SOC AIME, V233, P497

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