NOVEL REAL-SPACE HOT-ELECTRON TRANSFER DEVICES

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376

[2] DEMONSTRATION OF A NEW OSCILLATOR BASED ON REAL-SPACE TRANSFER IN HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 493 - 495

[3] DiLorenzo J. V., 1982, International Electron Devices Meeting. Technical Digest, P578

[4] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER [J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 469 - 471

[5] CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 810 - 812

[6] MEASUREMENTS OF HOT-ELECTRON CONDUCTION AND REAL-SPACE TRANSFER IN GAAS-ALXGA1-X AS HETEROJUNCTION LAYERS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 36 - 38

[7] FAST SWITCHING AND STORAGE IN GAAS-ALXGA1-XAS HETEROJUNCTION LAYERS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 297 - 300

[8] LURYI S, UNPUB

[9] MALIK RJ, 1980, ELECTRON LETT, V16, P837

[10] TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 781 - 787

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376

[2] DEMONSTRATION OF A NEW OSCILLATOR BASED ON REAL-SPACE TRANSFER IN HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 493 - 495

[3] DiLorenzo J. V., 1982, International Electron Devices Meeting. Technical Digest, P578

[4] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER [J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 469 - 471

[5] CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 810 - 812

[6] MEASUREMENTS OF HOT-ELECTRON CONDUCTION AND REAL-SPACE TRANSFER IN GAAS-ALXGA1-X AS HETEROJUNCTION LAYERS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 36 - 38

[7] FAST SWITCHING AND STORAGE IN GAAS-ALXGA1-XAS HETEROJUNCTION LAYERS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 297 - 300

[8] LURYI S, UNPUB

[9] MALIK RJ, 1980, ELECTRON LETT, V16, P837

[10] TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 781 - 787