STRUCTURAL-PROPERTIES OF AMORPHOUS SIC FILMS AND X-RAY MEMBRANES BY EXAFS

被引：12

作者：

HAGHIRIGOSNET, AM

ROUSSEAUX, F

GAT, E

DURAND, J

FLANK, AM

机构：

[1] Laboratoire de Microstructures et de Microélectronique, L2M/CNRS, 92220 Bagneux

[2] Laboratoire de physicochimie des Matériaux, URA1312 CNRS, ENSCM, 34053 Montpellier Cedex 1

[3] LURE, Université de Paris Sud

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90044-R

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The local atomic structure around silicon has been studied from EXAFS spectra at Si K edge in both PECVD and triode sputtered a-SixC1-x(H) films. Si-C and Si-Si bonds are observed in a ratio depending of the composition for the two first atomic shells. After annealing at 750-degrees-C no clusters are present in the amorphous.

引用

页码：215 / 218

页数：4

共 7 条

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