ENHANCED OXIDATION OF ALUMINUM - EFFECTS OF THIN CERIUM OVERLAYERS

被引：10

作者：

RAAEN, S ^{[1
]}

BRAATEN, NA ^{[1
]}

GREPSTAD, JK ^{[1
]}

QIU, SL ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB,UPTON,NY 11973

来源：

PHYSICA SCRIPTA | 1990年 / 41卷 / 06期

关键词：

D O I：

10.1088/0031-8949/41/6/064

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thin cerium overlayers, 3-10 Å, on aluminum are found to enhance dramatically the oxidation of the substrate at room temperature. Two logarithmic oxidation regimes are observed in the growth curve, one is assigned to the formation of a thin layer of a mixed Ce-Al oxide, and the other to the growth of bulk Al oxide. © 1990 IOP Publishing Ltd.

引用

页码：1001 / 1004

页数：4

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