LATERAL RESONANT-TUNNELING THROUGH CONSTRICTIONS IN A DELTA-DOPED GAAS LAYER

被引：5

作者：

BLAIKIE, RJ

NAKAZATO, K

OAKESHOTT, RBS

CLEAVER, JRA

AHMED, H

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,BLACKETT LAB,LONDON SW7 2BZ,ENGLAND

[2] UNIV CAMBRIDGE,CAVENDISH LAB,MICROELECTR RES CTR,CAMBRIDGE CB3 0HE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 01期

关键词：

D O I：

10.1063/1.110897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated constrictions in delta-doped GaAs using implanted gates to provide the lateral confinement. Large conductance oscillations are observed when the gate voltage is varied. The drain-Source current-voltage characteristics are highly nonlinear; as many as 30 peaks are present, and peak-to-valley ratios greater than 100 have been measured. These results are explained in terms of resonant tunneling through the random potential distribution in the point contact. Using a simple model for the potential distribution we are able to simulate qualitatively the structure in the conductance.

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页码：118 / 120

页数：3

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