SILICON FIELD EMITTER ARRAYS WITH LOW CAPACITANCE AND IMPROVED TRANSCONDUCTANCE FOR MICROWAVE-AMPLIFIER APPLICATIONS

被引：17

作者：

PALMER, D ^{[1
]}

GRAY, HF ^{[1
]}

MANCUSI, J ^{[1
]}

TEMPLE, D ^{[1
]}

BALL, C ^{[1
]}

SHAW, JL ^{[1
]}

MCGUIRE, GE ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.587917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

DC and RF measurements were conducted on electron field emission current obtained from silicon field emitter arrays (FEAs) containing more than 1000 tips. The field emitters in these FEAs have the form of 4 μm tall cylindrical columns where the tops of the columns were sharpened into points having radii of curvature < 100 angstrom. As a result of placing the field emitters on tall columns, the parallel-plate capacitance between the cathode and gate electrodes of these FEAs has been decreased considerably. The RF measurements of collected current, input power, and device input impedance are consistent with the current and voltage measurements at DC, thereby giving credence to the design of vacuum microelectronic microwave amplifiers using this type of silicon FEA.

引用

页码：576 / 579

页数：4

共 5 条

[1]

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[2] ANALYSIS AND DESIGN OF MICROWAVE-AMPLIFIERS EMPLOYING FIELD-EMITTER ARRAYS [J].

CALAME, JP ;

GRAY, HF ;

SHAW, JL .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (03) :1485-1504

[3]

Gammie G., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P753, DOI 10.1109/IEDM.1993.347204

[4]

PALMER D, 1994, IEEE T ELECT DEV, V41, P1866

[5]

Spindt C. A., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P749, DOI 10.1109/IEDM.1993.347205

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