PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN AL0.28GA0.72AS

被引：38

作者：

BALLINGALL, JM ^{[1
]}

COLLINS, DM ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.331708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：341 / 345

页数：5

相关论文

共 28 条

[1] ASHEN DJ, 1975, J PHYS CHEM SOLIDS, V36, P104
[2] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS
BALDERESCHI, A
LIPARI, NO
[J]. PHYSICAL REVIEW B, 1973, 8 (06) : 2697 - 2709
[3] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS
BOGARDUS, EH
BEBB, HB
[J]. PHYSICAL REVIEW, 1968, 176 (03): : 993 - &
[4] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS
BRIONES, F
COLLINS, DM
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 847 - 866
[5] INFLUENCE OF GROWTH-CONDITIONS ON THE THRESHOLD CURRENT-DENSITY OF DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
CASEY, HC
RADICE, C
FOY, PW
[J]. ELECTRONICS LETTERS, 1980, 16 (02) : 72 - 74
[6] COLLINS D, UNPUB, P12707
[7] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE
DINGLE, R
[J]. PHYSICAL REVIEW, 1969, 184 (03): : 788 - &
[8] DINGLE R, 1976, I PHYS C SER A, V33, P210
[9] SCREENING AND STARK EFFECTS DUE TO IMPURITIES ON EXCITONS IN SEMICONDUCTORS
HANAMURA, E
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 28 (01) : 120 - &
[10] IMENKOV AN, 1975, SOV PHYS SEMICOND+, V8, P947