DIFFUSION IN ULTRATHIN FILMS STUDIED BY TIME-RESOLVED FTIR-ATR SPECTROSCOPY

被引：7

作者：

HELLSTERN, U

HOFFMANN, V

机构：

[1] Institut für Physikalische und Theoretische Chemie, Universität Tübingen, Tübingen, D-72076

来源：

JOURNAL OF MOLECULAR STRUCTURE | 1995年 / 349卷

关键词：

D O I：

10.1016/0022-2860(95)08776-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

With the focus on microelectronic and sensor devices the diffusion process of gases in ultrathin films coating the surface of semiconductor crystals has been studied with the method of time resolved FTIR-ATR spectroscopy. A formula to calculate attenuated total reflectivities for all film thicknesses is presented. Based on this formula a least-squares program was developed. The reflectivity measured by time resolved ATR spectroscopy for diffusion processes in thin films characteristically depend on their thickness. Therefore in addition to diffusion coefficients film thicknesses in a range of 10 nm up to the penetration depth can be calculated from the reflectivities as well. Measurements of diffusing gases in some polymers with different chemical and structural characteristics will be discussed in this paper.

引用

页码：329 / 332

页数：4