OPTICAL-ENERGY GAP OF THICK AMORPHOUS SELENIUM FILM - COMMENT

被引：18

作者：

ALANI, SKJ

HOGARTH, CA

机构：

[1] Brunel Univ, Dep of Physics,, Uxbridge, Engl, Brunel Univ, Dep of Physics, Uxbridge, Engl

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1984年 / 69卷 / 01期

关键词：

D O I：

10.1016/0022-3093(84)90133-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Reference is made to a previous work of another author in which the optical absorption coefficient alpha was measured as a function of incident photon energy for samples of amorphous selenium of thickness of the order of 420 nm and in which the results obtained were interpreted in terms of non-direction transitions in k-space and plotted graphically. This note presents a comment on these results and proposes a replotting of the data in terms of a more appropriate equation.

引用

页码：167 / 168

页数：2

共 5 条

[1] VARIATION OF OPTICAL GAP OF THICK AMORPHOUS SELENIUM FILM ON HEAT-TREATMENT [J].

CHAUDHURI, S ;

BISWAS, SK ;

CHOUDHURY, A ;

GOSWAMI, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 54 (1-2) :179-182

[2]

Davis E. A., 1970, Journal of Non-Crystalline Solids, V4, P107, DOI 10.1016/0022-3093(70)90026-8

[3] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].

DAVIS, EA ;

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&

[4]

MOTT NF, 1971, ELECTRONIC PROCESSES

[5] THE LONG-WAVELENGTH EDGE OF PHOTOGRAPHIC SENSITIVITY AND OF THE ELECTRONIC ABSORPTION OF SOLIDS [J].

URBACH, F .

PHYSICAL REVIEW, 1953, 92 (05) :1324-1324

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