A CHANNELING STUDY OF ION-PRODUCED DISORDER IN SILICON-CARBIDE

被引：11

作者：

CHECHENIN, NG

BOURDELLE, KK

SUVOROV, AV

机构：

[1] Institute of Nuclear Physics, Moscow State University

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 48卷 / 1-4期

关键词：

Silicon Carbide;

D O I：

10.1016/0168-583X(90)90111-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The RBS/C technique is used to study the disorder buildup in silicon carbide (SiC) produced by Al+ and Ga+ ions with energies of 40 and 90 keV. The damage rate increases sharply in the fluence range near the critical value for amorphization, Φ ≈ 1 × 1014 cm-2 and = 8×1014 cm-2 for Ga+ and Al+ ions, respectively. The defect concentration rises slowly with fluence outside this range. At fluences Φ > Φc, the concept of elastic energy loss density is used in the analysis of the amorphous layer thickness. A strong decrease of the critical energy loss density, Wc, is observed when the amorphous layer expands due to fluence accumulation. © 1990.

引用

页码：235 / 239

页数：5

共 11 条

[1]

BURENKOV AF, 1985, SPATIAL ENERGY DISTR

[2]

Hart R. R., 1971, Radiation Effects, V9, P261, DOI 10.1080/00337577108231058

[3] ENERGY-DEPENDENCE OF HE+ AND H+ CHANNELING IN SI OVERLAID WITH AU FILMS [J].

LUGUJJO, E ;

MAYER, JW .

PHYSICAL REVIEW B, 1973, 7 (05) :1782-1791

[4] DAMAGE ACCUMULATION IN CERAMICS DURING ION-IMPLANTATION [J].

MCHARGUE, CJ ;

FARLOW, GC ;

BEGUN, GM ;

WILLIAMS, JM ;

WHITE, CW ;

APPLETON, BR ;

SKLAD, PS ;

ANGELINI, P .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 16 (2-3) :212-220

[5] ON NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS [J].

SIGMUND, P .

APPLIED PHYSICS LETTERS, 1969, 14 (03) :114-&

[6] ION-BEAM MODIFICATION OF 6H/15R SIC CRYSTALS [J].

SPITZNAGEL, JA ;

WOOD, S ;

CHOYKE, WJ ;

DOYLE, NJ ;

BRADSHAW, J ;

FISHMAN, SG .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 16 (2-3) :237-243

[7] DISORDER PRODUCTION IN ION-IMPLANTED GALLIUM-ARSENIDE AT 40-K [J].

STEVANOVIC, DV ;

TOGNETTI, NP ;

CARTER, G ;

CHRISTODOULIDES, CE ;

IBRAHIM, AM ;

THOMPSON, DA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 71 (1-2) :95-107

[8]

SUVOROV AV, 1989, PHYS STATUS SOLIDI A, V112, P635

[9] DISORDER PRODUCTION AND AMORPHIZATION IN ION-IMPLANTED SILICON [J].

THOMPSON, DA ;

GOLANSKI, A ;

HAUGEN, KH ;

STEVANOVIC, DV ;

CARTER, G ;

CHRISTODOULIDES, CE .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (1-2) :69-84

[10] SIC AMORPHIZATION AS A RESULT OF GA+ IMPLANTATION [J].

TULINOV, AF ;

CHECHENIN, NG ;

BOURDELLE, KK ;

MAKAROV, VN ;

SUVOROV, AV .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 33 (1-4) :788-791

← 1 2 →