ON THE DETERMINATION OF THE ENERGY-BAND OFFSETS IN HG1-XCDXTE HETEROJUNCTIONS

被引：10

作者：

CASSELMAN, TN

SHER, A

SILBERMAN, J

SPICER, WE

CHEN, AB

机构：

[1] SRI INT,MENLO PK,CA 94025

[2] STANFORD UNIV,STANFORD,CA 94305

[3] AUBURN UNIV,AUBURN,AL 36849

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.572259

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1692 / 1695

页数：4

共 19 条

[1]

ANDERSON RL, 1967, SOLID STATE ELECTRON, V3, P341

[2]

[Anonymous], ELECTRONIC STRUCTURE

[3] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J].

BARAFF, GA ;

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1977, 38 (05) :237-240

[4] HGCDTE HETEROJUNCTIONS [J].

BRATT, PR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1687-1691

[5] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[6] RELATION BETWEEN THE ELECTRONIC STATES AND STRUCTURAL-PROPERTIES OF HG1-XCDXTEA [J].

CHEN, AB ;

SHER, A ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1674-1677

[7] SELF-CONSISTENT PSEUDOPOTENTIAL METHOD FOR LOCALIZED CONFIGURATIONS - MOLECULES [J].

COHEN, ML ;

SCHLUTER, M ;

CHELIKOWSKY, JR ;

LOUIE, SG .

PHYSICAL REVIEW B, 1975, 12 (12) :5575-5579

[8]

COHEN ML, 1980, ADV ELECTRON EL PHYS, V51, P1

[9] INTERSTITIAL POTENTIAL DIFFERENCES, ELECTRONEGATIVITY DIFFERENCES, AND EFFECTIVE IONIC CHARGES IN ZINC-BLENDE-TYPE SEMICONDUCTORS [J].

FRENSLEY, WR ;

KROEMER, H .

APPLIED PHYSICS LETTERS, 1977, 31 (01) :48-50

[10] PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES [J].

FRENSLEY, WR ;

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :810-815

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