MODEL STUDIES OF LOW-TEMPERATURE TITANIUM NITRIDE THIN-FILM GROWTH

被引：73

作者：

DUBOIS, LH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

POLYHEDRON | 1994年 / 13卷 / 08期

关键词：

D O I：

10.1016/S0277-5387(00)80266-1

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The reaction of tetrakis(dimethylamido)titanium [Ti(NMe2)4, tdmat] and ammonia to yield titanium nitride (TiN) thin films and gas phase dimethylamine (HNMe2) is discussed. Film growth is dominated by gas phase reactions which lead to the formation of large, oligomeric clusters of the form: [GRAPHICS] These decompose on the surface of the growing film at temperatures greater than or similar to 450 K. By isotopically labelling the ammonia with N-15 or deuterium, we conclude that both the nitrogen in a clean TiN film and the nitrogen bound hydrogen (deuterium) in the gaseous dimethylamine product are derived exclusively from ammonia. Evidence for carbon contamination through the intermediacy of a Ti-N-C metallocycle is provided. Our observations are compared with the known thermal chemistry of titanium dialkylamides in solution.

引用

页码：1329 / 1336

页数：8

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