MASS-PRODUCTION OF LASER-DIODES BY MBE

被引：2

作者：

MATAKI, H

TANAKA, H

机构：

[1] ROHM Corporation, Ukyo-ku, Kyoto, 615

来源：

MICROELECTRONICS JOURNAL | 1994年 / 25卷 / 08期

关键词：

D O I：

10.1016/0026-2692(94)90128-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molecular beam epitaxy (MBE) plays an important role in the mass production of AlGaAs laser diodes which have been widely used in a variety of opto-electronic applications. This paper provides an overview of self-aligned structure AlGaAs laser diodes fabricated by MBE ('SAM laser diodes') focusing on the GaAs passivation technique that we put into practical use for the first time, and on the modification of conventional MBE systems. Several features of SAM laser diodes for practical applications are also reviewed.

引用

页码：619 / 630

页数：12

共 16 条

[1]

Agrawal G., 1993, SEMICONDUCTOR LASERS

[2] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].