CONSIDERATIONS ON HIGH-RESOLUTION PATTERNS ENGRAVED BY ION ETCHING

被引：34

作者：

CANTAGREL, M ^{[1
]}

机构：

[1] THOMSON CSF,LAB CENT RECH,91401 ORSAY,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 07期

关键词：

D O I：

10.1109/T-ED.1975.18166

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：483 / 486

页数：4

共 18 条

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[4]

CANTAGREL M, TO BE PUBLISHED

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[7] EVOLUTION OF WELL-DEFINED SURFACE CONTOUR SUBMITTED TO ION-BOMBARDMENT - COMPUTER-SIMULATION AND EXPERIMENTAL INVESTIGATION [J].

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JOURNAL OF MATERIALS SCIENCE, 1975, 10 (01) :52-62

[8] DEVELOPMENT OF A GENERAL SURFACE CONTOUR BY ION EROSION - THEORY AND COMPUTER-SIMULATION [J].

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[9]

DUCOMMUN JP, 1974, 4TH COLL AVISEM TOUL, P256

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