MODELING HIGHLY NONLINEAR RESISTS

被引:1
作者
EIB, NK
机构
[1] IBM, East Fishkill General, Technology Div, Hopewell Junction,, NY, USA, IBM, East Fishkill General Technology Div, Hopewell Junction, NY, USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期
关键词
ELECTRON BEAMS - Applications - INTEGRATED CIRCUIT MANUFACTURE - PHOTORESISTS - Mathematical Models;
D O I
10.1116/1.583280
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A master rate equation based on Bose-Einstein statistics is presented that accurately describes the dissolution characteristics of any highly nonlinear resist. Nonlinear resists exhibit long time delays or induction times before the onset of rapid development rates. The master rate equation requires a maximum of five adjustable fitting parameters, may be used for both optical and electron beam lithography modeling, and avoids problems with local negative development rates, discontinuities, and infinites whenever other dissolution rate equations are used. The least-squares fit of the master rate equation to experimental dissolution data is rapid and stable. The accuracy of the master rate equation has been verified for electron beam modeling by comparison with experimentally determined nonlinear resist profiles.
引用
收藏
页码:425 / 428
页数:4
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