GRATING FABRICATION AND CHARACTERIZATION METHOD FOR WAFERS UP TO 2-IN

被引：6

作者：

BODERE, A

CARPENTIER, D

ACCARD, A

FERNIER, B

机构：

[1] Alcatel Alsthom Recherche, 91460 Marcoussis, Route de Nozay

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

GRATING; OPTOELECTRONIC DEVICES; INDIUM PHOSPHIDE;

D O I：

10.1016/0921-5107(94)90067-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present paper, we describe a laser holographic system to fabricate first-order gratings with pitches from 190 to 250 nm, over the entire surface of 2 in epitaxial wafers. We present an operating procedure allowing good control of parameters that determine the mark/space ratio. The corrugation uniformity is measured by a mapping grating efficiency system. By using a buried guiding layer, we achieve good control of the coupling coefficient. An improvement of the fabrication yield for devices is shown by means of distributed feedback laser diodes results.

引用

页码：293 / 295

页数：3

共 8 条

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[8] 1.3-MU-M DISTRIBUTED FEEDBACK LASER DIODE WITH A GRATING ACCURATELY CONTROLLED BY A NEW FABRICATION TECHNIQUE
TAKEMOTO, A
OHKURA, Y
KAWAMA, Y
NAKAJIMA, Y
KIMURA, T
YOSHIDA, N
KAKIMOTO, S
SUSAKI, W
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