LOCAL-VIBRATIONAL-MODE SPECTROSCOPY OF DX CENTERS IN SI-DOPED GAAS UNDER HYDROSTATIC-PRESSURE

被引：72

作者：

WOLK, JA

KRUGER, MB

HEYMAN, JN

WALUKIEWICZ, W

JEANLOZ, R

HALLER, EE

机构：

[1] UNIV CALIF BERKELEY,DIV MAT SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,DEPT GEOL,BERKELEY,CA 94720

[3] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.66.774

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the observation of a new local vibrational mode (LVM) in hydrostatically stressed, Si-doped GaAs. The corresponding infrared absorption peak is distinct from the Si(Ga) shallow-donor LVM peak and is assigned to the Si DX center. The relative intensities of the Si DX LVM and the Si shallow-donor LVM peaks and photoquenching behavior of the sample are consistent with the appearance of a defect which binds two electrons as it undergoes a large lattice relaxation at approximately 23 kbar.

引用

页码：774 / 777

页数：4

共 33 条

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].