A TIME-DEPENDENT NUMERICAL-MODEL OF THE INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：30

作者：

MOCK, MS ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT MATH,NEW BRUNSWICK,NJ 08903

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 10期

关键词：

D O I：

10.1016/0038-1101(81)90118-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：959 / 966

页数：8

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[7] 2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

MOCK, MS .

SOLID-STATE ELECTRONICS, 1973, 16 (05) :601-609

[8] TIME DISCRETIZATION OF A NONLINEAR INITIAL VALUE-PROBLEM [J].

MOCK, MS .

JOURNAL OF COMPUTATIONAL PHYSICS, 1976, 21 (01) :20-37

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