NUMERICAL-SIMULATION OF FAR INFRARED-EMISSION UNDER POPULATION-INVERSION OF HOLE SUBBANDS

被引:21
作者
STARIKOV, EV
SHIKTOROV, PN
机构
[1] Institute of Semiconductor Physics, Academy of Sciences of the Lithuanian SSR, Vilnius
关键词
D O I
10.1007/BF00619764
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The amplification and generation of far infrared radiation under population inversion of direct optical transitions between light and heavy hole sub-bands in the warped valence band of p-type Ge and Si are investigated theoretically via Monte Carlo simulation of hole heating in crossed electric and magnetic fields. Both linear and nonlinear regimes of interaction between hot holes and radiation are considered. Attention is paid chiefly to a description of the methods and procedures which allow calculation of the hole-radiation interaction characteristics, such as the coefficient of radiation amplification due to inversion, the coefficient of radiation absorption caused by free hole scattering by lattice imperfections and the power of the generated radiation. The optimum conditions for amplification and generation obtained from the analysis of spectral, field, concentration and other dependences of the calculated net amplification coefficient are presented.
引用
收藏
页码:S177 / S193
页数:17
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