A 35-NS 64K EEPROM

被引：7

作者：

JOLLY, RD

TESCH, R

CAMPBELL, KJ

TENNANT, DL

OLUND, JF

LEFFERTS, RB

CREMEN, BT

ANDREWS, PA

机构：

[1] Lattice Semiconductor Corp,, Portland, OR, USA, Lattice Semiconductor Corp, Portland, OR, USA

来源：

关键词：

D O I：

10.1109/JSSC.1985.1052423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：971 / 978

页数：8

共 15 条

[1] BLAUSHILD RA, 1978, FEB ISSCC DIG TECH P, P50
[2] GUPTA A, 1982, FEB ISSCC, P184
[3] A FAULT-TOLERANT 30 NS-375 MW 16KX1 NMOS STATIC RAM
HARDEE, KC
SUD, R
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1981, 16 (05) : 435 - 443
[4] JENQ CS, 1981, DEC IEDM WASH, P388
[5] JOHNSON WS, 1980, FEB ISSCC, P152
[6] JOLLY R, 1985, FEB ISSCC, P172
[7] LANCASTER A, 1983, FEB ISSCC, P164
[8] LANDERS G, 1982, ELECTRONICS 0630, P58
[9] LIANG MS, 1981, DEC IEDM, P396
[10] MEHROTRA S, 1984, FEB ISSCC, P142