RECTIFYING METAL/POLY(3-HEXYLTHIOPHENE) CONTACTS

被引：14

作者：

GUSTAFSSON, G

INGANAS, O

SUNDBERG, M

SVENSSON, C

机构：

[1] Department of Physics (IFM), Linköping University

来源：

SYNTHETIC METALS | 1991年 / 41卷 / 1-2期

关键词：

D O I：

10.1016/0379-6779(91)91117-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rectifying contacts between poly(3-hexylthiophene) and Indium-Tin oxide or Aluminum have been studied by means of current-voltage measurements and capacitance-voltage measurements. The results show that the current transport through these contacts is not well described by conventional thermionic emission theory. Furthermore, the dopant distribution is not homogeneous in the polymer. Dopants accumulate near the polymer/metal interface. This accumulation can be enhanced by means of an electric field applied across the structure.

引用

页码：499 / 502

页数：4

共 9 条

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