PHOTOCHEMICAL-REACTIONS IN GEO2-SIO2 GLASSES INDUCED BY ULTRAVIOLET-IRRADIATION - COMPARISON BETWEEN HG LAMP AND EXCIMER-LASER

被引：151

作者：

NISHII, J ^{[1
]}

FUKUMI, K ^{[1
]}

YAMANAKA, H ^{[1
]}

KAWAMURA, KI ^{[1
]}

HOSONO, H ^{[1
]}

KAWAZOE, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.52.1661

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GeO2-SiO2 glasses prepared by vapor-phase axial deposition were exposed to ultraviolet (uv) radiation from a Hg discharge lamp (4.9 eV) and excimer lasers (KrF laser: 5.0 eV, XeCl laser: 4.0 eV). Two photochemical reaction channels were ascertained: (1) The exposure of the glasses to the Hg lamp radiation (similar to 16 mW/cm(2)) induced Ge E' centers accompanied by bleaching of the absorption band due to oxygen-deficient defects near 5 eV (5-eV band) and the emergence of an intense band near 6.4 eV. (2) The irradiation with KrF and XeCl lasers (power densities of 10 and 90 mJ/cm(2)/pulse, respectively, pulse duration of 20 ns) generated two types of paramagnetic defects, electron trapped centers associated with fourfold coordinated Ge ions (GEC) and a self-trapped hole center (STH: bridging oxygen trapping a hole). The former and the latter were considered to be caused via one-photon and two-photon absorption processes, respectively. These alternative reactions proceeded independently depending on the power densities of uv photons. The formation of GEC's was saturated easily by irradiation with KrF laser pulses, and then the conversion of GEC to Ge E' centers was caused by prolonged irradiation.

引用

页码：1661 / 1665

页数：5

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