INTERFACIAL ELECTRICAL-PROPERTIES OF ION-BEAM SPUTTER DEPOSITED AMORPHOUS-CARBON ON SILICON

被引：19

作者：

KHAN, AA

WOOLLAM, JA

CHUNG, Y

BANKS, B

机构：

[1] UNIVERSAL ENERGY SYST,DAYTON,OH 45432

[2] NASA,LEWIS RES CTR,CLEVELAND,OH 44135

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 05期

关键词：

D O I：

10.1109/EDL.1983.25682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：146 / 149

页数：4

共 16 条

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[2]

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OJHA, SM .

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[6]

KIM JC, 1973, IEDM WASHINGTON DEC

[7] CHARACTERIZATION OF IMPROVED INSB INTERFACES [J].

LANGAN, JD ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1474-1477

[8]

MATHINE D, UNPUB OPTICAL PROPER

[9] CAPACITANCE-VOLTAGE AND SURFACE PHOTO-VOLTAGE MEASUREMENTS OF PYROLYTICALLY DEPOSITED SIO2 ON INP [J].

MEINERS, LG .

THIN SOLID FILMS, 1979, 56 (1-2) :201-207

[10]

NICOLLIAN EH, 1982, MOS METAL OXIDE SEMI, P207

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