TRANSPORT-PROPERTIES OF PARALLEL MULTIPLE BALLISTIC POINT CONTACTS

被引：6

作者：

HIRAYAMA, Y

SAKU, T

机构：

[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 02期

关键词：

AIGaAs; Ballistic point contact; Field-effect; Focused ion beam; GaAs; One-dimensional channel; Transistor;

D O I：

10.1143/JJAP.29.L368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Parallel multiple ballistic point contacts are fabricated using the highly resistive region induced by focused Ga ion beam scanning. The fabricated structure is controlled by a single Schottky gate electrode placed upon it. Quantized currents of µA order are obtained in the fabricated structures. © 1990 IOP Publishing Ltd.

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页码：L368 / L370

页数：3

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