1ST OBSERVATION OF STRAINED SILOXANE BONDS ON SILICON-OXIDE THIN-FILMS

被引:54
作者
CHIANG, CM [1 ]
ZEGARSKI, BR [1 ]
DUBOIS, LH [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1021/j100129a004
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We provide the first experimental evidence that edge-shared tetrahedra ( > Si < o/o > Si < ) can exist on the surface of silicon oxide thin films. These sites are characterized by infrared active Si-O-Si bending modes at 888 and 908 cm-1 and by their high reactivity toward both water and triethylsilanol. They are formed by annealing at high temperature (greater-than-or-equal-to 1400 K) and not by the recombination of surface silanol groups. Our observations confirm recent theoretical predictions.
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页码:6948 / 6950
页数:3
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