LASER-INDUCED TRANSIENT GRATING IN SEMICONDUCTOR-DOPED GLASSES

被引：2

作者：

FENG, Z

YUN, HLZ

SHENG, FH

机构：

[1] Jilin Univ, China

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1988年 / 150卷 / 02期

关键词：

D O I：

10.1002/pssb.2221500250

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：663 / 666

页数：4

共 13 条

[1]

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[4] DEGENERATE 4-WAVE MIXING IN SEMICONDUCTOR-DOPED GLASSES [J].

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[5]

LOU YH, 1987, P INT C LUMINESCENCE, P202

[6] FEMTOSECOND CARRIER RELAXATION IN SEMICONDUCTOR-DOPED GLASSES [J].

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KAISER, W .

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[7]

OBRIGHT GK, 1987, OPT LETT, V12, P413

[8]

OBRIGHT GR, 1986, APPL PHYS LETT, V48, P1184

[9] NONLINEAR OPTICAL-PROPERTIES OF THIN-FILM WAVE-GUIDES DEPOSITED ONTO SEMICONDUCTOR-DOPED GLASSES [J].

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[10]

PEYGHAMBARIAN N, 1986, P INT C QUANTUM ELEC, pPD19

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