HIGH-FREQUENCY RESONANT-TUNNELING OSCILLATORS

被引：10

作者：

BROWN, ER

PARKER, CD

CALAWA, AR

MANFRA, MJ

CHEN, CL

MAHONEY, LJ

GOODHUE, WD

SODERSTROM, JR

MCGILL, TC

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexingtoo, Massachusetts

[2] Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California

[3] Chalmers Institute of Technology, Göteborg

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1991年 / 4卷 / 01期

关键词：

RESONANT-TUNNELING DIODE; OSCILLATOR; SUBMILLIMETER-WAVE;

D O I：

10.1002/mop.4650040108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advances in high-frequency resonant-tunneling-diode (RTD) oscillators are described. Oscillations up to a frequency of 420 GHz have been achieved in the GaAs/AlAs system. Recent results obtained with In0.53Ga0.47As/AlAs and InAs/AlSb RTDs show a greatly increased power density and indicate the potential for fundamental oscillations up to about 1 THz. These results are consistent with a lumped-element equivalent circuit model of the RTD. The model shows that the maximum oscillation frequency of the GaAs/AlAs RTDs is limited primarily by series resistance, and that the power density is limited by low peak-to-valley current ratio.

引用

页码：19 / 23

页数：5

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