FORMATION OF CRYSTALLINE ISLANDS OF C-60 ON SI(111)

被引：17

作者：

CHEN, DM ^{[1
]}

XU, H ^{[1
]}

CREAGER, WN ^{[1
]}

BURNETT, P ^{[1
]}

机构：

[1] HARVARD UNIV,CAMBRIDGE,MA 02138

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1116/1.587668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The formation of epitaxial crystalline islands of C60 on both the Si(111)7 X 7 and Si(111)square-root 3 X square-root 3-B surfaces is shown to follow an initial growth of a disordered layer and islands. This process is associated with a disordered-to-ordered interface transition at a critical coverage of three monolayers. Such a transition is driven and stabilized by the interlayer molecular couplings owing to the short range van der Waals interactions between the C60 molecules.

引用

页码：1910 / 1913

页数：4

共 9 条

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