DIRECT EVIDENCE FOR A CHARGE-CONTROLLED DIPOLAR STRUCTURE OF THE EL2 COMPLEX CENTER IN SEMI-INSULATING GAAS

被引:14
作者
FILLARD, JP
BONNAFE, J
CASTAGNE, M
机构
[1] Univ de Montpellier 2 (Univ des, Sciences et Techniques du, Languedoc), Cent d'Electronique de, Univ de Montpellier 2 (Univ des Sciences et Techniques du Languedoc), Cent d'Electronique de Montpe
关键词
D O I
10.1063/1.333780
中图分类号
O59 [应用物理学];
学科分类号
摘要
The EL2 center is a key defect controlling the electrical and optical properties of semi-insulating GaAs. Controversial hypotheses have been proposed to establish its quantum scheme and to relate it to possible chemical or structural origins. Very recently a model was proposed that included a shallow donor impurity and a lattice defect; these two charged centers are associated in a dipolar structure corresponding to two different possible configurations depending on the charge state of the dipole. This should explain unexpected phenomena such as the persistent photocapacitance, photoconductivity, and photoluminescence quenching. Some direct experimental evidence is given here supporting and completing the proposed theoretical model. The two distinct energy-level schemes related to the two different configurations are selectively revealed in electrical thermally-stimulated conductivity experiments and this conclusively confirms the model.
引用
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页码:3020 / 3021
页数:2
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