SURFACE FLASHOVER OF SILICON

被引：21

作者：

PETERKIN, FE ^{[1
]}

RIDOLFI, T ^{[1
]}

BURESH, LL ^{[1
]}

HANKLA, BJ ^{[1
]}

SCOTT, DK ^{[1
]}

WILLIAMS, PF ^{[1
]}

NUNNALLY, WC ^{[1
]}

THOMAS, BL ^{[1
]}

机构：

[1] UNIV TEXAS,CTR ENERGY CONVERS RES,ARLINGTON,TX 76019

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.64518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of high-voltage semiconductor devices has been hampered by the occurrence of flashover at the surface of the semiconductor. The physical mechanisms responsible for this phenomenon are not understood. We present new empirical information which clarifies the processes responsible for surface flashover in a vacuum ambient by showing clearly that in flashover current flows primarily inside the semiconductor surface rather than in the ambient. This observation is in fundamental disagreement with the standard model for vacuum flashover of insulator surfaces. © 1990 IEEE

引用

页码：2459 / 2465

页数：7

共 17 条

[1] MECHANISM OF PULSED SURFACE FLASHOVER INVOLVING ELECTRON-STIMULATED DESORPTION [J].