WAVELENGTH SHIFT IN VERTICAL-CAVITY LASER ARRAYS ON A PATTERNED SUBSTRATE

被引：6

作者：

ENG, LE ^{[1
]}

BACHER, K ^{[1
]}

YUEN, W ^{[1
]}

LARSON, M ^{[1
]}

DING, G ^{[1
]}

HARRIS, JS ^{[1
]}

CHANGHASNAIN, CJ ^{[1
]}

机构：

[1] SOLID STATE LAB,STANFORD,CA 94305

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 07期

关键词：

SEMICONDUCTOR LASER ARRAYS; VERTICAL CAVITY SURFACE EMITTING LASERS;

D O I：

10.1049/el:19950368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate a spatially chirped emission wavelength in vertical cavity surface emitting laser (VCSEL) arrays grown by molecular beam epitaxy. The wavelength shift is due to a lateral thickness variation in the Al0.2Ga0.8As cavity, which is induced by a substrate temperature profile during growth. A 20 nm shift in lasing wavelength is obtained in a VCSEL array.

引用

页码：562 / 563

页数：2

共 11 条

[1] MOLECULAR-BEAM EPITAXY GROWTH OF VERTICAL CAVITY OPTICAL-DEVICES WITH INSITU CORRECTIONS [J].